2 x Vishay SIHB12N60E-GE3 N-channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK - Vishay
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£0.00
£6.99
RS 768-9300
Unit Quantity:
2
Unit Type:
Unit
Location:
ES-4K
Vishay
Vishay SIHB12N60E-GE3 N-channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK
BMUK Part # :- 768-9300- BrandVishay
- Mfr Part No.SIHB12N60E-GE3
-
- You will get a pack of 2 Transistors
Product Details
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit, and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC), and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
Specifications
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
10.67mm
Transistor Configuration
Single
Typical Turn-On Delay Time
14 ns
Brand
Vishay
Typical Turn-Off Delay Time
35 ns
Maximum Continuous Drain Current
12 A
Package Type
D2PAK (TO-263)
Maximum Power Dissipation
147 W
Series
E Series
Mounting Type
Surface Mount
Minimum Operating Temperature
-55 °C
Width
9.65mm
Minimum Gate Threshold Voltage
2V
Height
4.83mm
Maximum Drain Source Resistance
380 mΩ
Maximum Drain Source Voltage
600 V
Pin Count
3
Dimensions
10.67 x 9.65 x 4.83mm
Category
Power MOSFET
Typical Gate Charge @ Vgs
29 nC @ 10 V
Transistor Material
Si
Channel Mode
Enhancement
Typical Input Capacitance @ Vds
937 pF@ 10 V
Channel Type
N
Maximum Gate Source Voltage
-20 V, +20 V
