5 x Infineon AUIRFR3504 N-channel MOSFET, 87A, 40V HEXFET, 3-Pin TO-252AA - Infineon

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    Infineon

    Infineon AUIRFR3504 N-channel MOSFET, 87 A, 40 V HEXFET, 3-Pin TO-252AA


    • BMUK Part # :-748-1847P
    • BrandInfineon
    • Mfr. Part No.AUIRFR3504
    •  
    •  
    • You will get a pack of 5 Transistors


    Infineon AUIRFR3504 N-channel MOSFET, 87 A, 40 V HEXFET, 3-Pin TO-252AA





    Product Details

    Automotive N-Channel Power MOSFET, Infineon


    Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single-die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across-the-range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


    MOSFET Transistors, Infineon

    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS, and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density, and cost-effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


    Specifications


    		Channel TypeN

    		Maximum Continuous Drain Current87 A

    		Maximum Drain Source Voltage40 V

    		Maximum Drain Source Resistance9.2 mΩ

    		Maximum Gate Threshold Voltage4V

    		Minimum Gate Threshold Voltage2V

    		Maximum Gate Source Voltage-20 V, +20 V

    		Package TypeTO-252AA

    		Mounting TypeSurface Mount

    		Pin Count3

    		Transistor ConfigurationSingle

    		Channel ModeEnhancement

    		CategoryPower MOSFET

    		Maximum Power Dissipation140 W

    		Typical Turn-On Delay Time11 ns

    		Minimum Operating Temperature-55 °C

    		Typical Gate Charge @ Vgs48 nC @ 10 V

    		Typical Input Capacitance @ Vds2150 pF @ 25 V

    		Typical Turn-Off Delay Time36 ns

    		Height2.39mm

    		SeriesHEXFET

    		Maximum Operating Temperature+175 °C

    		Length6.73mm

    		Dimensions6.73 x 6.22 x 2.39mm

    		Transistor MaterialSi

    		Number of Elements per Chip1

    		Width6.22mm