4 x Infineon IRFB7540PBF N-channel MOSFET, 110A, 60V StrongIRFET, 3-Pin - Infineon

roll over the image to zoom in

£0.00
£7.49
RS 820-8849
Earn0
reward points

In stock: 86

Sorry! We're out of stock

Add To Your Wishlist
    Unit Quantity:
    4
    Unit Type:
    Unit
    Location:
    ES WS-2B
    Maximum DC Collector Current:
    60 A


    Infineon

    Infineon IRFB7540PBF N-channel MOSFET, 110 A, 60 V StrongIRFET, 3-Pin TO-220AB


    • BMUK Part # :-820-8849
    • BrandInfineon
    • Mfr. Part No.IRFB7540PBF
    •  
    •  
    • You will get a pack of 4 Transistors

    r8208849-01.jpg





     
     
     
     
     
     
    Product Details

    StrongIRFET™ Power MOSFET, Infineon

    Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.


    MOSFET Transistors, Infineon

    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specifications


    		Channel TypeN

    		Maximum Continuous Drain Current110 A

    		Maximum Drain Source Voltage60 V

    		Maximum Drain Source Resistance5.1 mΩ

    		Maximum Gate Threshold Voltage3.7V

    		Minimum Gate Threshold Voltage2.1V

    		Maximum Gate Source Voltage±20 V

    		Package TypeTO-220AB

    		Mounting TypeThrough Hole

    		Pin Count3

    		Transistor ConfigurationSingle

    		Channel ModeEnhancement

    		CategoryPower MOSFET

    		Maximum Power Dissipation160 W

    		Width4.83mm

    		Minimum Operating Temperature-55 °C

    		Typical Gate Charge @ Vgs88 nC @ 10 V

    		Typical Input Capacitance @ Vds4555 pF @ 25 V

    		Typical Turn-Off Delay Time58 ns

    		Dimensions10.67 x 4.83 x 16.51mm

    		Transistor MaterialSi

    		Typical Turn-On Delay Time12 ns

    		Height16.51mm

    		Number of Elements per Chip1

    		SeriesStrongIRFET

    		Maximum Operating Temperature+175 °C

    		Length10.67mm

     

     
    To view the datasheet please Click Here


    Please visit our shop to see all our other items we have in stock,




     
    Please call us if you have any questions,




     
    Many thanks!