2 x Infineon BSC750N10NDGATMA1 Dual N-channel MOSFET 13A, 100V OptiMOS 2, 8-Pin - Infineon
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£0.00
£5.99
RS 754-5327
Unit Quantity:
2
Unit Type:
Unit
Location:
ES-5K
Infineon
Infineon BSC750N10NDGATMA1 Dual N-channel MOSFET, 13 A, 100 V OptiMOS 2, 8-Pin TDSON
- BMUK Part # :-754-5327
- BrandInfineon
- Mfr Part No.BSC750N10NDGATMA1
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- You will get a pack of 2 Transistors
Product Details
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high-frequency Telecom, Datacom, solar, low voltage drives, and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Specifications
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Length
5.15mm
Transistor Configuration
Isolated
Typical Turn-On Delay Time
9 ns
Brand
Infineon
Typical Turn-Off Delay Time
13 ns
Maximum Continuous Drain Current
13 A
Package Type
TDSON
Maximum Power Dissipation
26 W
Series
OptiMOS 2
Mounting Type
Surface Mount
Minimum Operating Temperature
-55 °C
Width
5.9mm
Maximum Gate Threshold Voltage
4V
Height
1mm
Minimum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
75 mΩ
Maximum Drain Source Voltage
100 V
Pin Count
8
Dimensions
5.15 x 5.9 x 1mm
Typical Gate Charge @ Vgs
8 nC @ 10 V
Transistor Material
Si
Channel Mode
Enhancement
Typical Input Capacitance @ Vds
540 pF @ 50 V
Channel Type
N
Maximum Gate Source Voltage
-20 V, +20 V
