20 x NXP PBSS304ND NPN Low Saturation Bipolar Transistor, 3A, 80V, 6-Pin TSOP - NXP
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£0.00
£8.99
RS 485-335
Unit Quantity:
20
Unit Type:
Unit
Location:
TS 42J
NXP
NXP PBSS304ND NPN Low Saturation Bipolar Transistor, 3 A, 80 V, 6-Pin TSOP
- BMUK Part # :-485-335
- BrandNXP
- Mfr. Part No.PBSS304ND
-
- You will get a pack of 20 Transistors
Product Details
Low Saturation Voltage NPN Transistors, NXP
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, NXP Semiconductors
Specifications
| Transistor Type | NPN | |
| Maximum DC Collector Current | 3 A | |
| Maximum Collector Emitter Voltage | 80 V | |
| Package Type | TSOP | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 2.5 W | |
| Minimum DC Current Gain | 35 | |
| Configuration | Single Quad Collector | |
| Maximum Collector Base Voltage | 80 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Maximum Operating Frequency | 140 MHz | |
| Pin Count | 6 | |
| Number of Elements per Chip | 1 | |
| Height | 1mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.1mm | |
| Dimensions | 1 x 3.1 x 1.7mm | |
| Maximum Collector Emitter Saturation Voltage | 0.505 V | |
| Maximum Base Emitter Saturation Voltage | 1 V | |
| Minimum Operating Temperature | -65 °C | |
| Width | 1.7mm |
For a Specification PDF Please CLICK HERE
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