Fairchild RFP12N10L x2 MOSFET 12A 100V Logic Level F12N10L Arduino PIC Micro - Fairchild Semiconductor

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    Unit Quantity:
    2
    Unit Type:
    Unit
    Location:
    TS-LB 2M AND 48J
    Maximum DC Collector Current:
    12 A


    Fairchild Semiconductor

    Fairchild RFP12N10L N-channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB


    • BMUK Part # :- 295-703
    • BrandFairchild Semiconductor
    • Mfr. Part No.RFP12N10L
    •  
    •  
    • You will get 2 Transistors







     
     
     
     
     
    Product Details

    Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

    Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


    MOSFET Transistors, Fairchild Semiconductor

    Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
    Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.


    Specifications

     

    		Channel TypeN

    		Maximum Continuous Drain Current12 A

    		Maximum Drain Source Voltage100 V

    		Maximum Drain Source Resistance200 mΩ

    		Minimum Gate Threshold Voltage1V

    		Maximum Gate Source Voltage-10 V, +10 V

    		Package TypeTO-220AB

    		Mounting TypeThrough Hole

    		Transistor ConfigurationSingle

    		Pin Count3

    		Channel ModeEnhancement

    		CategoryPower MOSFET

    		Maximum Power Dissipation60 W

    		Dimensions10.67 x 4.83 x 9.4mm

    		Maximum Operating Temperature+150 °C

    		Width4.83mm

    		Number of Elements per Chip1

    		Length10.67mm

    		Minimum Operating Temperature-55 °C

    		Typical Input Capacitance @ Vds900 pF@ 25 V

    		Typical Turn-Off Delay Time100 ns

    		Transistor MaterialSi

    		Typical Turn-On Delay Time15 ns

    		Height9.4mm
     



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