50 x Fairchild FDV302P P-channel MOSFET Transistor 0.12A 25V SMD ESD Protection - Fairchild
Fairchild
Fairchild FDV302P P-channel MOSFET Transistor, 0.12 A, 25 V, 3-Pin SOT-23
You get 50 MOSFET Transistors, each in a section of SM Tape in an Anti static bag,
Enhancement Mode P-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.
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MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V). The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Category | Power MOSFET | |
Channel Mode | Enhancement | |
Channel Type | P | |
Configuration | Single | |
Dimensions | 2.92 x 1.3 x 0.93mm | |
Height | 0.93mm | |
Length | 2.92mm | |
Maximum Continuous Drain Current. | 0.12 A | |
Maximum Drain Source Resistance | 10 Ω | |
Maximum Drain Source Voltage | 25 V | |
Maximum Gate Source Voltage | 8 V | |
Maximum Operating Temperature | +150 °C | |
Maximum Power Dissipation | 0.35 W | |
Minimum Operating Temperature | -55 °C | |
Mounting Type | Surface Mount | |
Number of Elements per Chip | 1 | |
Package Type | SOT-23 | |
Pin Count | 3 | |
Typical Gate Charge @ Vgs | 0.22 nC @ 4.5 V | |
Typical Input Capacitance @ Vds | 11 pF @ 10 V | |
Typical Turn-Off Delay Time | 9 ns | |
Typical Turn-On Delay Time | 5 ns | |
Width | 1.3mm |
For a Specification PDF Please CLICK HERE
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