5 x Infineon IRF7309PBF Dual N/P-channel MOSFET, 3A, 4A, 30V, 8-Pin - Infineon
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£0.00
£7.99
RS 542-9377
Unit Quantity:
5
Unit Type:
Unit
Location:
WS WS-4A
Infineon
Infineon IRF7309PBF Dual N/P-channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC
- BMUK Part # :-542-9377
- BrandInfineon
- Mfr. Part No.IRF7309PBF
-
- You will get a pack of 5 Transistors
Product Details
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
Specifications
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 3 A, 4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Maximum Drain Source Resistance | 50 mΩ, 100 mΩ | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Gate Source Voltage | ±20 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Transistor Configuration | Isolated | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 1.4 W | |
| Maximum Operating Temperature | +150 °C | |
| Series | HEXFET | |
| Height | 1.5mm | |
| Board Level Components | Y | |
| Typical Turn-Off Delay Time | 22 ns, 25 ns | |
| Typical Input Capacitance @ Vds | 440 pF@ 15 V, 520 pF@ 15 V | |
| Typical Gate Charge @ Vgs | 25 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Typical Turn-On Delay Time | 6.8 (N) ns, 11 (P) ns | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
| Length | 5mm | |
| Dimensions | 5 x 4 x 1.5mm | |
| Width | 4mm |
