5 x Infineon BSC050N03MSGATMA1 N-channel MOSFET, 80A, 30V OptiMOS 3, 8-Pin TDSON - Infineon
£0.00
£6.99
RS 754-5263-TS-LB-6E
Unit Quantity:
5
Unit Type:
Unit
Infineon
Infineon BSC050N03MSGATMA1 N-channel MOSFET, 80 A, 30 V OptiMOS 3, 8-Pin TDSON
BMUK Part # :- 754-5263- BrandInfineon
- Mfr Part No.BSC050N03MS G
-
- You will get a pack of 5 Transistors

Product Details
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Specifications
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
5.35mm
Transistor Configuration
Single
Typical Turn-On Delay Time
14 ns
Brand
Infineon
Typical Turn-Off Delay Time
16 ns
Maximum Continuous Drain Current
80 A
Package Type
TDSON
Maximum Power Dissipation
50 W
Series
OptiMOS 3
Mounting Type
Surface Mount
Minimum Operating Temperature
-55 °C
Width
6.1mm
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Height
1.1mm
Maximum Drain Source Resistance
6.3 mΩ
Maximum Drain Source Voltage
30 V
Pin Count
8
Dimensions
5.35 x 6.1 x 1.1mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Transistor Material
Si
Channel Mode
Enhancement
Typical Input Capacitance @ Vds
2700 pF @ 15 V
Channel Type
N
Maximum Gate Source Voltage
-20 V, +20 V