5 x Infineon AUIRF9952Q Dual N/P-channel MOSFET Transistor 2.3A, 3.5A 30V 8-Pin - International Rectifier

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    Unit Quantity:
    5
    Unit Type:
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    Location:
    BRA 6N


    International Rectifier

    Infineon AUIRF9952Q Dual N/P-channel MOSFET Transistor, 2.3 A, 3.5 A, 30 V, 8-Pin SOIC




    • BrandInternational Rectifier
    • Mfr. Part No.AUIRF9952Q
    •  International Rectifier
    •  
    • You will get a pack of 5 Transistors



    Infineon AUIRF9952Q Dual N/P-channel MOSFET Transistor, 2.3 A, 3.5 A, 30 V, 8-Pin SOIC




    Product Details

    Automotive Dual Power MOSFET, Infineon

    Infineon's HEXFET® MOSFET technology offers AECQ-101 automotive qualified Dual die MOSFET devices. Dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose dual N-channel, dual P-channel, or dual N/P-channel configurations.


    MOSFET Transistors, Infineon

    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS, and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density, and cost-effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


    Specifications

     

    		Channel TypeN, P

    		Maximum Continuous Drain Current2.3 A, 3.5 A

    		Maximum Drain Source Voltage30 V

    		Maximum Drain Source Resistance150 mΩ, 400 mΩ

    		Maximum Gate Threshold Voltage3V

    		Minimum Gate Threshold Voltage1V

    		Maximum Gate Source Voltage-20 V, +20 V

    		Package TypeSOIC

    		Mounting TypeSurface Mount

    		Pin Count8

    		Channel ModeEnhancement

    		CategoryPower MOSFET

    		Maximum Power Dissipation2 W

    		Typical Input Capacitance @ Vds190 pF @ -15 V, 190 pF @ 15 V

    		Typical Turn-Off Delay Time13 ns, 20 ns

    		Width4mm

    		Number of Elements per Chip2

    		Minimum Operating Temperature-55 °C

    		Height1.5mm

    		Maximum Operating Temperature+150 °C

    		Length5mm

    		Dimensions5 x 4 x 1.5mm

    		Typical Gate Charge @ Vgs6.1 nC @ 10 V, 6.9 nC @ 10 V

    		Typical Turn-On Delay Time6.2 ns, 9.7 ns