| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | P | |
| Configuration | Quad Drain, Single, Triple Source | |
| Dimensions | 5 x 4 x 1.5mm | |
| Height | 1.5mm | |
| Length | 5mm | |
| Maximum Continuous Drain Current | -17.1 A | |
| Maximum Drain Source Resistance | 0.018 Ω | |
| Maximum Drain Source Voltage | -30 V | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 5.35 W | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | SO-8 | |
| Pin Count | 8 | |
| Typical Gate Charge @ Vgs | 77.1 nC V @ -10 | |
| Typical Input Capacitance @ Vds | 4600 pF V @ -15 | |
| Typical Turn-Off Delay Time | 103 ns | |
| Typical Turn-On Delay Time | 5.4 ns | |
| Width | 4mm |
