4 x IRF640SPBF N-channel MOSFET Transistor by IR 18A 200V 3-Pin D2PAK Infineon - International Rectifier
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£0.00
£6.99
RS 541-2464
Unit Quantity:
4
Unit Type:
Unit
Mounting Style:
Surface Mount
Number of Pins:
3
Location:
TSB-8E
Maximum DC Collector Current:
18 A
International Rectifier
International Rectifier IRF640SPBF N-channel MOSFET Transistor, 18A, 200V, 3-Pin D2PAK
- BMUK Part # :-541-2464
- BrandInternational Rectifier
- Mfr. Part No.IRF640SPBF
- Location:-TS BRA 2C
- You will get 4 MOSFET's in Anti Static Packing
Product Details
N-Channel Power MOSFET, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon (IR)
Infineon comprehensive portfolio of rugged single and dual N-channel and P-channel devices offer fast switching speeds and addresses a wide variety of power requirements. Applications range from ac-dc and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.
Specifications
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 200 V | |
| Maximum Drain Source Resistance | 0.18 Ω | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Gate Source Voltage | ±20 V | |
| Package Type | D2PAK TO-263 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 130 W | |
| Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Turn-On Delay Time | 10 ns | |
| Typical Input Capacitance @ Vds | 1160 pF@ 25 V | |
| Typical Turn-Off Delay Time |
