2x Infineon AUIRF4104 N-Channel Automotive MOSFET 120A 40V HEXFET 3-Pin TO-220AB - Infineon
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£0.00
£5.95
RS 913-3994 / TS-BRA-1H
Unit Quantity:
2
Unit Type:
Unit
Location:
TS-BRA-1H
Infineon
AUIRF4104 N-Channel MOSFET, 120 A, 40 V HEXFET, 3-Pin TO-220AB Infineon
- BMUK Stock No.913-3994
- Brand
- Mfr Part No.AUIRF4104
- You will get 2 MOSFET's
Product Details
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Specifications
Maximum Operating Temperature
+175 °C
Maximum Continuous Drain Current
120 A
Package Type
TO-220AB
Maximum Power Dissipation
140 W
Mounting Type
Through Hole
Width
4.82mm
Height
16.51mm
Dimensions
10.66 x 4.82 x 16.51mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Transistor Configuration
Single
Typical Turn-On Delay Time
16 ns
Brand
Infineon
Typical Turn-Off Delay Time
38 ns
Series
HEXFET
Minimum Operating Temperature
-55 °C
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
5.5 mΩ
Maximum Drain Source Voltage
40 V
Pin Count
3
Category
Power MOSFET
Typical Gate Charge @ Vgs
68 nC @ 10 V
Channel Mode
Enhancement
Typical Input Capacitance @ Vds
3000 pF @ 25 V
Channel Type
N
Maximum Gate Source Voltage
-20 V, +20 V
