2 x Ixys IXFQ26N50P3 N-channel MOSFET, 26A, 500V HiperFET, Polar3, 3-Pin - IXYS
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£0.00
£14.99
RS 802-4458
Unit Quantity:
2
Unit Type:
Unit
Location:
TS 51B
IXYS
IXYS IXFQ26N50P3 N-channel MOSFET, 26 A, 500 V HiperFET, Polar3, 3-Pin TO-3P
- BMUK Part # :-802-4458
- BrandIXYS
- Mfr. Part No.IXFQ26N50P3
-
- You will get a pack of 2 Transistors
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
| Channel Type | N | |
| Maximum Continuous Drain Current | 26 A | |
| Maximum Drain Source Voltage | 500 V | |
| Maximum Drain Source Resistance | 240 mΩ | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Gate Source Voltage | ±30 V | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 500 W | |
| Typical Turn-Off Delay Time | 38 ns | |
| Length | 15.8mm | |
| Dimensions | 15.8 x 4.9 x 20.3mm | |
| Typical Turn-On Delay Time | 21 ns | |
| Series | HiperFET, Polar3 | |
| Width | 4.9mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V | |
| Typical Input Capacitance @ Vds | 2220 pF @ 25 V | |
| Height | 20.3mm | |
| Maximum Operating Temperature | +150 °C |
