Category | Power MOSFET | |
Channel Mode | Enhancement | |
Channel Type | N | |
Configuration | Single | |
Dimensions | 10.67 x 9.65 x 4.83mm | |
Height | 4.83mm | |
Length | 10.67mm | |
Maximum Continuous Drain Current. | 17 A | |
Maximum Drain Source Resistance | 0.06 Ω | |
Maximum Drain Source Voltage | 60 V | |
Maximum Gate Source Voltage | ±20 V | |
Maximum Operating Temperature | +175 °C | |
Maximum Power Dissipation | 44 W | |
Minimum Operating Temperature | -55 °C | |
Mounting Type | Surface Mount | |
Number of Elements per Chip | 1 | |
Package Type | D2PAK | |
Pin Count | 3 | |
Typical Gate Charge @ Vgs | 23 nC V @ 10 | |
Typical Input Capacitance @ Vds | 590 pF V @ 25 | |
Typical Turn-Off Delay Time | 21 ns | |
Typical Turn-On Delay Time | 7.8 ns | |
Width | 9.65mm |
2 x International Rectifier IRFZ24VSPBF N-channel MOSFET Transistor 17A 60V - International Rectifier
International Rectifier
International Rectifier IRFZ24VSPBF N-channel MOSFET Transistor, 17 A, 60 V, 3-Pin D2PAK
Product Details
N-Channel Power MOSFET 13A to 19A, International Rectifier
International Rectifier's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, International Rectifier
International Rectifier’s comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.
Specifications
For a Specification PDF Please CLICK HERE
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