| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | P | |
| Configuration | Single | |
| Dimensions | 10.54 x 4.69 x 8.77mm | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Resistance | 0.06 Ω | |
| Maximum Drain Source Voltage | 55 V | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Maximum Power Dissipation | 110 W | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Through Hole | |
| Number of Elements per Chip | 1 | |
| Package Type | TO-220AB | |
| Pin Count | 3 | |
| Typical Gate Charge @ Vgs | 63 nC V @ 10 | |
| Typical Input Capacitance @ Vds | 1200 pF V @ 25 | |
| Typical Turn-Off Delay Time | 39 ns | |
| Typical Turn-On Delay Time | 14 ns | |
| Width | 4.69mm |
