10 x ON Semiconductor FDG6316P Dual P-channel MOSFET 700mA 12V PowerTrench 6-Pin - ON Semiconductor
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£0.00
£6.99
RS 761-4432
Unit Quantity:
10
Unit Type:
Unit
Location:
ES-5K
ON Semiconductor
ON Semiconductor FDG6316P Dual P-channel MOSFET, 700 mA, 12 V PowerTrench, 6-Pin SOT-363 (SC-70)
- BMUK Part # :- 761-4432
- BrandON Semiconductor
- Mfr Part No.FDG6316P
-
- You will get a pack of 10 Transistors
Product Details
PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimized power switches that offer an increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr), and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ a shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significantly lower than that of the previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, Fairchild Semiconductor
Specifications
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Length
2mm
Transistor Configuration
Isolated
Typical Turn-On Delay Time
5 ns
Brand
ON Semiconductor
Typical Turn-Off Delay Time
8 ns
Maximum Continuous Drain Current
700 mA
Package Type
SOT-363 (SC-70)
Maximum Power Dissipation
300 mW
Series
PowerTrench
Mounting Type
Surface Mount
Minimum Operating Temperature
-55 °C
Width
1.25mm
Height
1mm
Minimum Gate Threshold Voltage
0.4V
Maximum Drain Source Resistance
650 mΩ
Maximum Drain Source Voltage
12 V
Pin Count
6
Dimensions
2 x 1.25 x 1mm
Category
Power MOSFET
Typical Gate Charge @ Vgs
1.7 nC @ 4.5 V
Transistor Material
Si
Channel Mode
Enhancement
Typical Input Capacitance @ Vds
146 pF @ -6 V
Channel Type
P
Maximum Gate Source Voltage
-8 V, +8 V
