10 x Infineon IRFR3710ZTRPBF N-channel MOSFET, 56A, 100V HEXFET, 3-Pin DPAK - Infineon
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£0.00
£10.99
RS 827-4050
Unit Quantity:
10
Unit Type:
Unit
Location:
TS LB 4G
Infineon
Infineon IRFR3710ZTRPBF N-channel MOSFET, 56 A, 100 V HEXFET, 3-Pin DPAK
- BMUK Part # :- 827-4050
- BrandInfineon
- Mfr Part No.IRFR3710ZTRPBF
- You will get a pack of 10 Transistors
Product Details
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across-the-range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Specifications
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
6.73mm
Transistor Configuration
Single
Typical Turn-On Delay Time
14 ns
Brand
Infineon
Typical Turn-Off Delay Time
53 ns
Maximum Continuous Drain Current
56 A
Package Type
DPAK (TO-252)
Maximum Power Dissipation
140 W
Series
HEXFET
Mounting Type
Surface Mount
Minimum Operating Temperature
-55 °C
Width
6.22mm
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Height
2.39mm
Maximum Drain Source Resistance
18 mΩ
Maximum Drain Source Voltage
100 V
Pin Count
3
Dimensions
6.73 x 6.22 x 2.39mm
Category
Power MOSFET
Typical Gate Charge @ Vgs
69 nC @ 10 V
Transistor Material
Si
Channel Mode
Enhancement
Typical Input Capacitance @ Vds
2930 pF @ 25 V
Channel Type
N
Maximum Gate Source Voltage
-20 V, +20 V
