10 x Infineon IPG20N06S4-15 Dual N-channel MOSFET 20A 60V OptiMOS T2 8-Pin TDSON - Infineon
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£0.00
£13.99
RS 825-9241
Unit Quantity:
10
Unit Type:
Unit
Location:
TS 56I
Infineon
Infineon IPG20N06S4-15 Dual N-channel MOSFET, 20 A, 60 V OptiMOS T2, 8-Pin TDSON
- BMUK Part # :-825-9241
- BrandInfineon
- Mfr. Part No.IPG20N06S4-15
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- You will get a pack of 10 Transistors
Product Details
Infineon OptiMOS™ T2 Power MOSFETs
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 60 V | |
| Maximum Drain Source Resistance | 15.5 mΩ | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Transistor Configuration | Isolated | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 50 W | |
| Typical Turn-Off Delay Time | 17 ns | |
| Width | 6.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Typical Turn-On Delay Time | 12 ns | |
| Transistor Material | Si | |
| Dimensions | 5.15 x 6.15 x 1mm | |
| Length | 5.15mm | |
| Maximum Operating Temperature | +175 °C | |
| Series | OptiMOS T2 | |
| Height | 1mm | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Typical Input Capacitance @ Vds | 1740 pF @ 25 V | |
| Number of Elements per Chip | 2 |
