10 x Fairchild RFD14N05SM9A, N-channel MOSFET Transistor 14A, 50V 3-Pin TO-252AA - Fairchild Semiconductor

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    Unit Quantity:
    10
    Unit Type:
    Unit
    Location:
    TS


    Fairchild Semiconductor

    10 x Fairchild RFD14N05SM9A, N-channel MOSFET Transistor 14A, 50V 3-Pin TO-252AA


    • BMUK Part # :-761-3987
    • Location: TS
    • BrandFairchild Semiconductor
    • Mfr. Part No.RFD14N05SM9A
    • Fairchild Semiconductor
    •  
    • You will get a pack of 10 Transistors

    Fairchild RFD14N05SM9A N-channel MOSFET Transistor, 14 A, 50 V, 3-Pin TO-252AA






     
     
     
     
     
     
    Product Details

    Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

    Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


    MOSFET Transistors, Fairchild Semiconductor

    Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
    Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

    Specifications


    		Channel TypeN

    		Maximum Continuous Drain Current14 A

    		Maximum Drain Source Voltage50 V

    		Maximum Drain Source Resistance0.1 Ω

    		Minimum Gate Threshold Voltage2V

    		Maximum Gate Source Voltage±20 V

    		Package TypeTO-252AA

    		Mounting TypeSurface Mount

    		Transistor ConfigurationSingle

    		Pin Count3

    		Channel ModeEnhancement

    		CategoryPower MOSFET

    		Maximum Power Dissipation48 W

    		Width6.22mm

    		Typical Input Capacitance @ Vds570 pF@ 25 V

    		Number of Elements per Chip1

    		Typical Gate Charge @ Vgs40 nC @ 20 V

    		Minimum Operating Temperature-55 °C

    		Typical Turn-Off Delay Time45 ns

    		Length6.73mm

    		Maximum Operating Temperature+175 °C

    		Dimensions6.73 x 6.22 x 2.39mm

    		Transistor MaterialSi

    		Height2.39mm

    		Typical Turn-On Delay Time14 ns