10 x Fairchild FDS8949_F085 Dual N-channel MOSFET 6A 40V PowerTrench, 8-Pin SOIC - Fairchild Semiconductor
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£0.00
£14.99
RS 864-8710
Unit Quantity:
10
Unit Type:
Unit
Location:
ES-10H
Fairchild Semiconductor
Fairchild FDS8949_F085 Dual N-channel MOSFET, 6 A, 40 V PowerTrench, 8-Pin SOIC
- BMUK Part # :-864-8710
- BrandFairchild Semiconductor
- Mfr Part No.FDS8949_F085
-
- You will get 10 of
Product Details
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer an increase in system efficiency and power density. They combine a small gate charge(Qg), a small reverse recovery charge(Qrr), and a soft reverse recovery body diode, which contribute towards fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ a shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significantly lower than that of the previous generation.
The soft body diode performance of the PowerTrench® MOSFETs can eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, Fairchild Semiconductor
Specifications
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Length
4.9mm
Transistor Configuration
Isolated
Typical Turn-On Delay Time
9 ns
Brand
Fairchild Semiconductor
Typical Turn-Off Delay Time
23 ns
Maximum Continuous Drain Current
6 A
Package Type
SOIC
Maximum Power Dissipation
2 W
Series
PowerTrench
Mounting Type
Surface Mount
Minimum Operating Temperature
-55 °C
Width
3.9mm
Minimum Gate Threshold Voltage
1V
Height
1.575mm
Maximum Drain Source Resistance
43 mΩ
Maximum Drain Source Voltage
40 V
Pin Count
8
Dimensions
4.9 x 3.9 x 1.575mm
Category
Power MOSFET
Typical Gate Charge @ Vgs
7.7 nC @ 5 V
Transistor Material
Si
Channel Mode
Enhancement
Typical Input Capacitance @ Vds
715 pF @ 20 V
Channel Type
N
Maximum Gate Source Voltage
-20 V, +20 V
