10 x Fairchild FDMS3604AS Dual N-channel MOSFET Transistor 30V T1=130A T2=60A - Fairchild
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£0.00
£20.50
RS 759-9914
Fairchild
Fairchild FDMS3604AS Dual N-channel MOSFET Transistor, 30 V, T1=130A, T2=60A
You will get a strip of 10 MOSFET Transistors on SM tape, Muli Buys come all on one tape,
Product Details
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
Designed to minimise losses in power conversion, while maintaining excellent switching performance
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch
MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V). The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer
Specifications
Please see our other items for a wide range of Electronic components.
Category Power MOSFET Channel Mode Enhancement Channel Type N Configuration Triple Drain Dimensions 5 x 6 x 1.05mm Height 1.05mm Length 5mm Maximum Continuous Drain Current 130 (Transistor 2) A, 60 (Transistor 1) A Maximum Drain Source Resistance 10.8 (Transistor 1) mΩ, 4 (Transistor 2) mΩ Maximum Drain Source Voltage 30 V Maximum Gate Source Voltage ±20 V Maximum Operating Temperature +150 °C Maximum Power Dissipation 2.2 (Transistor 1) W, 2.5 (Transistor 2) W Minimum Operating Temperature -55 °C Mounting Type Surface Mount Number of Elements per Chip 2 Package Type Power 56 Pin Count 8 Typical Gate Charge @ Vgs 21 nC V @ 0 → 10 (Transistor 1), 47 nC V @ 0 → 10 (Transistor 2) Typical Input Capacitance @ Vds 1273 pF @ 15 V (Transistor 1), 3078 pF @ 15 V (Transistor 2) Typical Turn-Off Delay Time 20 (Transistor 1) ns, 31 (Transistor 2) ns Typical Turn-On Delay Time 13 (Transistor 2) ns, 8.2 (Transistor 1) ns Width 6mm
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Triple Drain | |
| Dimensions | 5 x 6 x 1.05mm | |
| Height | 1.05mm | |
| Length | 5mm | |
| Maximum Continuous Drain Current | 130 (Transistor 2) A, 60 (Transistor 1) A | |
| Maximum Drain Source Resistance | 10.8 (Transistor 1) mΩ, 4 (Transistor 2) mΩ | |
| Maximum Drain Source Voltage | 30 V | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 2.2 (Transistor 1) W, 2.5 (Transistor 2) W | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 2 | |
| Package Type | Power 56 | |
| Pin Count | 8 | |
| Typical Gate Charge @ Vgs | 21 nC V @ 0 → 10 (Transistor 1), 47 nC V @ 0 → 10 (Transistor 2) | |
| Typical Input Capacitance @ Vds | 1273 pF @ 15 V (Transistor 1), 3078 pF @ 15 V (Transistor 2) | |
| Typical Turn-Off Delay Time | 20 (Transistor 1) ns, 31 (Transistor 2) ns | |
| Typical Turn-On Delay Time | 13 (Transistor 2) ns, 8.2 (Transistor 1) ns | |
| Width | 6mm |
For a Specification PDF Please CLICK HERE
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Please see our other items for a wide range of Electronic components.
