10 x Fairchild FDD7N20TM N-channel MOSFET, 5A, 200V UniFET, 3-Pin TO-252 - Fairchild Semiconductor
roll over the image to zoom in
£0.00
£7.99
RS 759-9106
Unit Quantity:
10
Unit Type:
Unit
Location:
TS 56B
Fairchild Semiconductor
Fairchild FDD7N20TM N-channel MOSFET, 5 A, 200 V UniFET, 3-Pin TO-252
- BMUK Part # :-759-9106
- BrandFairchild Semiconductor
- Mfr. Part No.FDD7N20TM
- You will get a pack of 10 Transistors
Product Details
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Add product to Compare
Specifications
Not what you’re looking for? Select the attributes you require, then click the button below
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 200 V | |
| Maximum Drain Source Resistance | 690 mΩ | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Package Type | TO-252 | |
| Mounting Type | Surface Mount | |
| Transistor Configuration | Single | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 43 W | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 5 nC @ 10 V | |
| Typical Input Capacitance @ Vds | 185 pF@ 25 V | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Typical Turn-On Delay Time | 9 ns | |
| Length | 6.73mm | |
| Series | UniFET | |
| Height | 2.39mm | |
| Dimensions | 6.73 x 6.22 x 2.39mm | |
| Typical Turn-Off Delay Time | 13 ns |
