1 x Infineon IRL8113PBF N-Channel MOSFET, 105A, 30V, 3-Pin TO-220AB - Infineon
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£0.00
£5.99
RS 165-7574 + RS 688-7207
Unit Quantity:
1
Unit Type:
Unit
Location:
TS BRA 14F + ES 10G
Infineon
N-Channel MOSFET, 105 A, 30 V, 3-Pin TO-220AB Infineon IRL8113PBF
- BMUK Stock No.165-7574/688-7207
- Brand
- Mfr Part No.IRL8113PBF
- You will get ONE MOSFET
Product Details
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Specifications
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Transistor Configuration
Single
Brand
Infineon
Maximum Continuous Drain Current
105 A
Package Type
TO-220AB
Maximum Power Dissipation
110 W
Series
HEXFET
Mounting Type
Through Hole
Minimum Operating Temperature
-55 °C
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Height
8.77mm
Maximum Drain Source Resistance
6 mΩ
Maximum Drain Source Voltage
30 V
Pin Count
3
Typical Gate Charge @ Vgs
23 nC @ 4.5 V
Transistor Material
Si
Channel Mode
Enhancement
Channel Type
N
Maximum Gate Source Voltage
-20 V, +20 V
