1 x Infineon IRL40B209 N-Channel MOSFET, 254A, 40V, 3-Pin TO-220 - Infineon

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    Unit Quantity:
    1
    Unit Type:
    Unit
    Location:
    ES 14C


    Infineon

    N-Channel MOSFET, 254 A, 40 V, 3-Pin TO-220 Infineon IRL40B209


    • BMUK Stock No.145-9550
    • Brand
    • Mfr Part No.IRL40B209
    •  
    • You will get ONE MOSFET








    Product Details

    StrongIRFET™ Logic-Level Power MOSFET, Infineon

    An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low RDS(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational reliability.

    Optimal RDS(on) @ VGS = +4.5V
    Suitable for battery-powered systems
    Applications: Motor drivers, synchronous rectifier systems, OR-ing & Redundant power switches, DC-DC converters




    MOSFET Transistors, Infineon

    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specifications

    Maximum Operating Temperature
    +175 °C
    Maximum Continuous Drain Current
    254 A
    Package Type
    TO-220
    Maximum Power Dissipation
    231 W
    Mounting Type
    Through Hole
    Width
    4.83mm
    Height
    16.51mm
    Transistor Material
    Si
    Number of Elements per Chip
    1
    Length
    10.67mm
    Transistor Configuration
    Single
    Brand
    Infineon
    Series
    StrongIRFET
    Minimum Operating Temperature
    -55 °C
    Maximum Gate Threshold Voltage
    2.4V
    Minimum Gate Threshold Voltage
    1V
    Maximum Drain Source Resistance
    2.4 mΩ
    Maximum Drain Source Voltage
    40 V
    Pin Count
    3
    Typical Gate Charge @ Vgs
    91 nC
    Channel Mode
    Enhancement
    Channel Type
    N
    Maximum Gate Source Voltage
    -20 V, +20 V
    Forward Diode Voltage
    1.2