1 x Broadcom ATF-50189-BLK HEMT RF Transistor Surface Mount 4.1μA 7V SOT-89 - Broadcom

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    Unit Quantity:
    1
    Unit Type:
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    Location:
    TS 58Q


    Broadcom

    Broadcom ATF-50189-BLK HEMT 4.1 μA 7 V 3-Pin SOT-89


    • BMUK Part # :-839-9954P
    • BrandBroadcom
    • Mfr. Part No.ATF-50189-BLK
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    • You will get ONE Transistor







    Product Details

    N-channel HEMT, Avago Technologies

    A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
    HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
    The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT devices being Enhancement mode types.


    JFET Transistors

    A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


    Specifications


    Maximum Continuous Drain Current4.1 μA

    Maximum Drain Source Voltage7 V

    Maximum Gate Source Voltage-5 V, +0.8 V

    Maximum Drain Gate Voltage-5 → 1V

    Mounting TypeSurface Mount

    Package TypeSOT-89

    Pin Count3

    ConfigurationSingle

    Maximum Power Dissipation2.25 W

    Dimensions4.6 x 2.6 x 1.6mm

    Height1.6mm

    Length4.6mm

    Maximum Operating Temperature+150 °C

    Width2.6mm

    To view the datasheet please Click Here
     
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