1 x Broadcom ATF-50189-BLK HEMT RF Transistor Surface Mount 4.1μA 7V SOT-89 - Broadcom
Broadcom
Broadcom ATF-50189-BLK HEMT 4.1 μA 7 V 3-Pin SOT-89
- BMUK Part # :-839-9954P
- BrandBroadcom
- Mfr. Part No.ATF-50189-BLK
- You will get ONE Transistor
N-channel HEMT, Avago Technologies
A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT devices being Enhancement mode types.
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Maximum Continuous Drain Current | 4.1 μA | |
Maximum Drain Source Voltage | 7 V | |
Maximum Gate Source Voltage | -5 V, +0.8 V | |
Maximum Drain Gate Voltage | -5 → 1V | |
Mounting Type | Surface Mount | |
Package Type | SOT-89 | |
Pin Count | 3 | |
Configuration | Single | |
Maximum Power Dissipation | 2.25 W | |
Dimensions | 4.6 x 2.6 x 1.6mm | |
Height | 1.6mm | |
Length | 4.6mm | |
Maximum Operating Temperature | +150 °C | |
Width | 2.6mm |